Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
US10246772B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Dec 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a high aspect ratio feature is disclosed. The method includes depositing one or more silicon oxide/silicon nitride containing stacks on a substrate by depositing a first film layer on the substrate from a first plasma and depositing a second film layer having a refractive index on the first film layer from a second plasma. A predetermined number of first film layers and second film layers are deposited on the substrate. The first film layer and the second film layer are either a silicon oxide layer or a silicon nitride layer and the first film layer is different from the second film layer. The method further includes depositing a third film layer from a third plasma and depositing a fourth film layer on the third film layer from a fourth plasma. The fourth film layer has a refractive index greater than the first refractive index.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.