Methods for selective etching of a silicon material
US10249507B2 · kind B2 · utility
1Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2017 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Apr 25, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/06
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.