Inventor · Santa Clara, CA, US

Zihui Li

33Patents
17h-index
48Co-inventors
77Inventor score

Filing activity: Mar 15, 2013 → Sep 29, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8956980B1 Selective etch of silicon nitride Electricity 218 Active
US9153442B2 Processing systems and methods for halide scavenging Electricity 217 Active
US8980763B2 Dry-etch for selective tungsten removal Electricity 203 Active
US9023732B2 Processing systems and methods for halide scavenging Electricity 184 Active
US9093371B2 Processing systems and methods for halide scavenging Electricity 183 Active
US9184055B2 Processing systems and methods for halide scavenging Electricity 178 Active
US9209012B2 Selective etch of silicon nitride Electricity 172 Active
US9449850B2 Processing systems and methods for halide scavenging Electricity 134 Active
US9412608B2 Dry-etch for selective tungsten removal Electricity 133 Active
US9406523B2 Highly selective doped oxide removal method Electricity 132 Active
US9502258B2 Anisotropic gap etch Electricity 129 Active
US9659792B2 Processing systems and methods for halide scavenging Electricity 121 Active
US9704723B2 Processing systems and methods for halide scavenging Electricity 114 Active
US9881805B2 Silicon selective removal Electricity 109 Active
US9991134B2 Processing systems and methods for halide scavenging Electricity 100 Active
US9831097B2 Methods for selective etching of a silicon material using HF gas without nitrogen etchants Electricity 99 Active
US10319600B1 Thermal silicon etch Electricity 33 Active
US9612975B2 Page cache device and method for efficient mapping Physics 6 Active
US11875131B2 Zero-shot cross-lingual transfer learning Physics 3 Active
US9653310B1 Methods for selective etching of a silicon material Chemistry; Metallurgy 2 Active
US10170336B1 Methods for anisotropic control of selective silicon removal Electricity 2 Active
US10249507B2 Methods for selective etching of a silicon material Chemistry; Metallurgy 1 Active
US11637002B2 Methods and systems to enhance process uniformity Electricity 1 Active
US10204796B2 Methods for selective etching of a silicon material using HF gas without nitrogen etchants Electricity 1 Active
US10573527B2 Gas-phase selective etching systems and methods Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.