Method for forming buried word lines
US10249629B1 · kind B1 · utility
3Cited by
3References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 22, 2018 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jan 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming buried word lines. Firstly, a substrate is provided, having a plurality of shallow trench isolations disposed therein, next, a plurality of first patterned material layers are formed on the substrate, a plurality of first recesses are disposed between every two adjacent first patterned material layers, a second patterned material layer is formed in the first recesses, and using the first patterned material layers and the second patterned material layer as the protect layers, and a first etching process is then performed, to form a plurality of second recesses in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.