Semiconductor structure
US10249706B1 · kind B1 · utility
6Cited by
3References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 12, 2018 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/042
Abstract
The present invention provides a semiconductor structure comprising a substrate, a cell region defined on the substrate, a plurality of lower electrodes of the capacitor structures located in the cell region, an top support structure, contacting a top region of the lower electrode structure, and at least one middle support structure located between the substrate and the top support structure, contacting a middle region of the lower electrode structure, wherein when viewed in a top view, the top support structure and the middle support structure do not completely overlapped with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.