Thin film and substrate-removed group III-nitride based devices and method
US10249786B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2016 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jul 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 108/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.