Patent · US Active

Structure for radiofrequency applications

US10250282B2 · kind B2 · utility

2Cited by

1References

19Claims

0Family size

Assignee

SOITEC · FR

Inventors

Oleg Kononchuk · Battle Ground, US
Didier Landru · Le Champ-près-Froges, FR
Christophe Figuet · Crolles, FR

Key dates

Filing date	Sep 17, 2015
Grant date	Apr 2, 2019
Priority date	—
Expiry date	Sep 17, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E60/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A structure for radiofrequency applications includes: a semiconducting supporting substrate, and a trapping layer arranged on the supporting substrate. The trapping layer includes a higher defect density than a predetermined defect density. The predetermined defect density is the defect density beyond which the electric resistivity of the trapping layer is no lower than 10,000 ohm·cm over a temperature range extending from −20° C. to 120° C.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.