Microelectronic devices designed with ultra-high-k dielectric capacitors integrated with package substrates
US10251272B2 · kind B2 · utility
1Cited by
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21Claims
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Key dates
| Filing date | Jun 30, 2017 |
| Grant date | Apr 2, 2019 |
| Priority date | — |
| Expiry date | Jul 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/107
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a microelectronic device that includes a plurality of organic dielectric layers and a capacitor that is integrated with a first organic dielectric layer of the plurality of organic dielectric layers. The capacitor includes first and second conductive electrodes and an ultra-high-k dielectric layer that is positioned between the first and second conductive electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.