Metrology method, target and substrate
US10254658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2016 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Sep 28, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of measuring a parameter of a lithographic process, the method including: illuminating a diffraction measurement target on a substrate with radiation, the measurement target including at least a first sub-target, at least a second sub-target and at least third sub-target, wherein the first, second and third sub-targets each include a periodic structure and wherein the first sub-target, second sub-target and third sub-target each have a different design and wherein at least two of the sub-targets are respectively designed for determination of a different lithographic process parameter; and detecting radiation scattered by the at least two sub-targets to obtain for that target a measurement representing the different parameters of the lithographic process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.