Phosphorous trifluoride co-gas for carbon implants
US10256069B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 9, 2017 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Nov 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/08
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.