Semiconductor processing systems having multiple plasma configurations
US10256079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jul 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.