Replacement contact cuts with an encapsulated low-K dielectric
US10256089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2017 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jun 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures and methods of forming an interconnect structure. A sacrificial contact is arranged between a first gate structure and a second gate structure. The sacrificial contact extends vertically to a source/drain region. A section of the sacrificial contact is removed to form a cut opening extending vertically to the source/drain region. A first dielectric layer is deposited in the cut opening, and is then partially removed to open a space in the cut opening that is arranged vertically above the first dielectric layer. A second dielectric layer is deposited that fills the space in the cut opening and forms a cap on the first dielectric layer. The first dielectric layer has a first dielectric constant, and the second dielectric layer has a second dielectric constant that is greater than the first dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.