Inventor · Rexford, NY, US

Huy Cao

21Patents
5h-index
47Co-inventors
61Inventor score

Filing activity: Mar 6, 2013 → Sep 17, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US9455204B1 10 nm alternative N/P doped fin for SSRW scheme Electricity 13 Active
US9390979B2 Opposite polarity borderless replacement metal contact scheme Electricity 9 Active
US10269654B1 Methods, apparatus and system for replacement contact for a finFET device Electricity 9 Active
US10325819B1 Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device Electricity 9 Active
US9330982B1 Semiconductor device with diffusion barrier film and method of manufacturing the same Electricity 7 Active
US8940650B2 Methods for fabricating integrated circuits utilizing silicon nitride layers Electricity 2 Active
US9589829B1 FinFET device including silicon oxycarbon isolation structure Electricity 2 Active
US9130019B2 Formation of carbon-rich contact liner material Electricity 1 Active
US9991363B1 Contact etch stop layer with sacrificial polysilicon layer Electricity 1 Active
US9318440B2 Formation of carbon-rich contact liner material Electricity 1 Active
US10431500B1 Multi-step insulator formation in trenches to avoid seams in insulators Electricity 0 Active
US10453751B2 Tone inversion method and structure for selective contact via patterning Electricity 0 Active
US9620381B2 Facilitating etch processing of a thin film via partial implantation thereof Electricity 0 Active
US10256089B2 Replacement contact cuts with an encapsulated low-K dielectric Electricity 0 Active
US10930549B2 Cap structure Electricity 0 Active
US9793169B1 Methods for forming mask layers using a flowable carbon-containing silicon dioxide material Electricity 0 Active
US10964599B2 Multi-step insulator formation in trenches to avoid seams in insulators Electricity 0 Active
US10056458B2 Siloxane and organic-based MOL contact patterning Electricity 0 Active
US11756786B2 Forming high carbon content flowable dielectric film with low processing damage Electricity 0 Active
US10043753B2 Airgaps to isolate metallization features Electricity 0 Active
US10460986B2 Cap structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.