Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system
US10256095B2 · kind B2 · utility
0Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2016 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Feb 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.