Patent · US Active

Durable bond pad structure for electrical connection to extreme environment microelectronic integrated circuits

US10256202B1 · kind B1 · utility

3Cited by
16References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 25, 2018
Grant dateApr 9, 2019
Priority date
Expiry dateJan 25, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3512
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A durable bond pad structure is described that facilitates highly durable electrical connections to semiconductor microelectronics chips (e.g., silicon carbide (SiC) chips) to enable prolonged operation over very extreme temperature ranges.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.