Durable bond pad structure for electrical connection to extreme environment microelectronic integrated circuits
US10256202B1 · kind B1 · utility
3Cited by
16References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2018 |
| Grant date | Apr 9, 2019 |
| Priority date | — |
| Expiry date | Jan 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A durable bond pad structure is described that facilitates highly durable electrical connections to semiconductor microelectronics chips (e.g., silicon carbide (SiC) chips) to enable prolonged operation over very extreme temperature ranges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.