Efficient metal-insulator-metal capacitor fabrication

US10256289B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kisup Chung · Slingerlands, US
• Isabel C. Estrada-Raygoza · Albany, US
• Hemanth Jagannathan · Niskayuna, US
• Chi-Chun Liu · Altamont, US
• Yann Mignot · Slingerlands, US
• Hao Tang · Slingerlands, US

Key dates

• Filing date: Nov 7, 2017
• Grant date: Apr 9, 2019
• Expiry date: Nov 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

Methods of forming capacitors include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.