Patent · US Active

Skip via structures

US10262892B2 · kind B2 · utility

0Cited by

0References

19Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Xunyuan Zhang · Albany, US
Frank W. Mont · Troy, US
Errol Todd Ryan · Wappingers Falls, US

Key dates

Filing date	Nov 8, 2016
Grant date	Apr 16, 2019
Priority date	—
Expiry date	Nov 8, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/53295
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to skip via structures and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; a second wiring layer with one or more wiring structures, located above the first wiring layer; a skip via with metallization, which passes through upper wiring levels including the second wiring layer and which makes contact with the one or more wiring structures of the first wiring layer; and a via structure which comprises a protective material and contacts at least one of the one or more wiring structures at the upper wiring level.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.