Magnetic memory device

US10263178B2 · kind B2 · utility

Assignee

• TOSHIBA MEMORY CORPORATION · JP

Inventors

• Kazuya SAWADA · Seoul, KR
• Toshihiko Nagase · Sagamihara, JP
• Youngmin EEH · Seongnam-si, KR
• Daisuke Watanabe · Chigasaki, JP
• Kenichi Yoshino · Yokohama, JP
• Tadaaki Oikawa · Nagano, JP
• Hiroyuki OHTORI · Yokkaichi, JP

Key dates

• Filing date: Mar 20, 2017
• Grant date: Apr 16, 2019
• Expiry date: Mar 20, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first and second magnetic layers. The second magnetic layer includes a first main surface on the nonmagnetic layer side and a second main surface opposite to the first main surface, and includes a first region on the first main surface side and a second region on the second main surface side, and an intermediate region between the first and second regions and containing a predetermined nonmagnetic element. A concentration of the predetermined nonmagnetic element in the intermediate region is higher than that in the first and second regions. The second magnetic layer contains a magnetic element from the first to second main surfaces.