Patent · US Active

Tantalum sputtering target

US10266924B2 · kind B2 · utility

0Cited by

20References

4Claims

0Family size

Assignee

JX Nippon Mining & Metals Corporation · JP

Inventors

Atsushi Fukushima · Tokyo, JP
Kunihiro Oda · Ibaraki, JP

Key dates

Filing date	Apr 23, 2010
Grant date	Apr 23, 2019
Priority date	—
Expiry date	Dec 1, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C14/3414
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.