Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10269559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2017 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Sep 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for depositing material into high aspect ratio features, features in a multi-laminate stack, features having positively sloped sidewalls, features having negatively sloped sidewalls, features having a re-entrant profile, and/or features having sidewall topography are described herein. Methods involve depositing a first amount of material, such as a dielectric (e.g., silicon oxide), into a feature and forming a sacrificial helmet on the field surface of the substrate, etching some of the first amount of the material to open the feature opening and/or smoothen sidewalls of the feature, and depositing a second amount of material to fill the feature. The sacrificial helmet may be the same as or different material from the first amount of material deposited into the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.