Etching method
US10269578B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2018 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Apr 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method of etching a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The etching method includes a first process of forming a film on the end surface of each protrusion region; a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process; and a third process of anisotropically etching the one or more end surfaces exposed through the second process atomic layer by atomic layer. The processing target layer contains silicon nitride, and the film contains silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.