Semiconductor device and method for manufacturing same
US10269825B2 · kind B2 · utility
1Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2016 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Nov 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
Abstract
According to one embodiment, a stacked body includes a plurality of metal layers stacked with an insulator interposed. A semiconductor body extends in a stacking direction through the stacked body. A charge storage portion is provided between the semiconductor body and one of the metal layers. A metal nitride film has a first portion and a second portion. The first portion is provided between the charge storage portion and one of the metal layers. The second portion is thicker than the first portion and is provided between one of the metal layers and the insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.