Anti-reflection layer for back-illuminated sensor
US10269842B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 4, 2017 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Aug 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.