Semiconductor film with adhesion layer and method for forming the same
US10269900B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2017 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | May 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide includes a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material that includes the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds. An interface between a dummy gate and a gate dielectric layer of a gate-last transistor structure may be similarly formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.