Inventor · Austin, TX, US

Hongfa Luan

21Patents
5h-index
26Co-inventors
65Inventor score

Filing activity: Dec 20, 2004 → Jul 25, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7361538B2 Transistors and methods of manufacture thereof Electricity 66 Expired
US8889497B2 Semiconductor devices and methods of manufacture thereof Electricity 17 Active
US7253050B2 Transistor device and method of manufacture thereof Electricity 8 Expired
US8188551B2 Semiconductor devices and methods of manufacture thereof Electricity 8 Active
US7696517B2 NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric Electricity 6 Active
US8017484B2 Transistor device and methods of manufacture thereof Electricity 5 Active
US10504735B2 Method of forming a semiconductor device by high-pressure anneal and post-anneal treatment Electricity 3 Active
US10714348B2 Semiconductor device having hydrogen in a dielectric layer Electricity 3 Active
US8722473B2 Semiconductor devices and methods of manufacture thereof Electricity 2 Active
US9006802B2 Semiconductor device manufacturing methods and methods of forming insulating material layers Electricity 2 Active
US10950447B2 Semiconductor device having hydrogen in a dielectric layer Electricity 2 Active
US9153657B2 Semiconductor devices comprising a fin Electricity 1 Active
US11776814B2 Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer Electricity 1 Active
US9659962B2 Semiconductor devices and methods of manufacture thereof Electricity 1 Active
US7160781B2 Transistor device and methods of manufacture thereof Electricity 1 Expired
US8269289B2 Transistor device and methods of manufacture thereof Electricity 0 Active
US9607826B2 Semiconductor device manufacturing methods and methods of forming insulating material layers Electricity 0 Active
US9660023B2 Semiconductor film with adhesion layer and method for forming the same Electricity 0 Active
US12183581B2 Method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer Electricity 0 Active
US10269900B2 Semiconductor film with adhesion layer and method for forming the same Electricity 0 Active
US9219120B2 Semiconductor film with adhesion layer and method for forming the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.