Patent · US Active

Method for producing a semiconductor device with self-aligned internal spacers

US10269930B2 · kind B2 · utility

4Cited by

0References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Shay Reboh · Grenoble, FR
Emmanuel Augendre · Montbonnot-Saint-Martin, FR
Remi Coquand · Chambéry, FR

Key dates

Filing date	Dec 11, 2017
Grant date	Apr 23, 2019
Priority date	—
Expiry date	Dec 11, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/832
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Method for producing a semiconductor device, comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.