Electronic device including a transistor including III-V materials and a process of forming the same
US10269947B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
Abstract
An electronic device can include a transistor. The transistor can include a first layer including a first III-V material, a second layer overlying the first layer and including a second III-V material, and a third layer overlying the first layer and including a third III-V material. In an embodiment, each of the first and second layers includes Al, and the second layer has a higher Al content as compared to the first layer. In another embodiment, the transistor can further include a gate dielectric layer overlying the third layer, and a gate electrode of the transistor overlying the gate dielectric layer and the third layer. The transistor can be an enhancement-mode high electron mobility transistor. The configuration of layers can allow for a relatively higher threshold voltage, as compared to conventional enhancement-mode high electron mobility transistor, to be achieved without significantly affecting RDSON.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.