Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device

US10273597B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Freund · Dietenhofen, DE
• Thomas Wuebben · Salzburg, AT
• Helmut Oefner · Zorneding, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Jun 29, 2017
• Grant date: Apr 30, 2019
• Expiry date: Jun 29, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/20
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.