Method and system for optical metrology in patterned structures
US10274435B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2015 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Nov 2, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A data analysis method and system are presented for use in determining one or more parameters of a patterned structure located on top of an underneath layered structure. According to this technique, input data is provided which includes first measured data PMD being a function ƒ of spectral intensity Iλ and phase φ, PMD=ƒ(Iλ;φ), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure. Also provided is a general function F describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD). The general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.