Methods of processing semiconductor devices
US10276479B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Oct 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/35121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.