Patent · US Active

One time programmable memory cell and memory array

US10276494B2 · kind B2 · utility

2Cited by

12References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Kerstin Kaemmer · Radebeul, DE
Martin Bartels · Dresden, DE
Henning Feick · Dresden, DE

Key dates

Filing date	Jul 19, 2017
Grant date	Apr 30, 2019
Priority date	—
Expiry date	Jul 19, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C17/18
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Memory cells and corresponding memory arrays are provided. The memory cell comprises a fusable element and a bipolar transistor arranged adjacent to the fusable element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.