Patent · US Active

Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure

US10276656B2 · kind B2 · utility

1Cited by

3References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Frank Hille · Munich, DE
Andre Brockmeier · Villach, AT
Francisco Javier Santos Rodriguez · Villach, AT
Daniel Schloegl · Villach, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Jan 31, 2018
Grant date	Apr 30, 2019
Priority date	—
Expiry date	Jan 31, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Epitaxy troughs are formed in a semiconductor substrate, wherein a matrix section of the semiconductor substrate laterally separates the epitaxy troughs and comprises a first semiconductor material. Crystalline epitaxy regions of a second semiconductor material are formed in the epitaxy troughs, wherein the second semiconductor material differs from the first semiconductor material in at least one of porosity, impurity content or defect density. From the epitaxy regions at least main body portions of semiconductor bodies of the semiconductor devices are formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.