Method for forming fin field effect transistor (FINFET) device structure
US10276720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Oct 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET device structure and method for forming the same are provided. The method includes forming a plurality of fin structures over a substrate, and the substrate includes a first region and a second region. The method includes forming a plurality of isolation structures surrounding the fin structures, and a top surface of each of the isolation structures is lower than a top surface of each of the fin structures, and the isolation structures include first isolation structures over the first region and second isolation structures over the second region. The method includes forming a mask layer on the first isolation structures to expose the second isolation structures and removing a portion of the second isolation structures, such that a top surface of each of the second isolation structures is lower than a top surface of each of the first isolation structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.