Atomic layer etching processes

US10283319B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Tom E. Blomberg · Vantaa, FI
• Varun Sharma · Helsinki, FI
• Suvi Haukka · Helsinki, FI
• Marko Tuominen · Helsinki, FI
• Chiyu Zhu · Helsinki, FI

Key dates

• Filing date: Dec 7, 2017
• Grant date: May 7, 2019
• Expiry date: Dec 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32135
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.