Method of reforming insulating film deposited on substrate with recess pattern
US10283353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Mar 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.