Interconnects formed by a metal replacement process
US10283372B2 · kind B2 · utility
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6References
20Claims
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Assignee
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Key dates
| Filing date | Sep 15, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming interconnects. An interconnect opening is formed in a dielectric layer. A first conductor layer composed of a first metal is formed in the interconnect opening. A second conductor layer is formed inside the interconnect opening by displacing the first metal of the first conductor layer and replacing the first metal with a second metal different from the first metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.