System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions
US10290352B2 · kind B2 · utility
3Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2015 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jan 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/697
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device for a one-time programmable (OTP) memory according to some examples of the disclosure includes a gate, a dielectric region below the gate, a source terminal below the dielectric region and offset to one side, a drain terminal below the dielectric region and offset to an opposite side from the source terminal, a drain side charge trap in the dielectric region capable of programming the semiconductor device, and a source side charge trap in the dielectric region opposite the drain side charge trap and capable of programming the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.