Three-dimensional semiconductor memory device and method for manufacturing the same
US10290595B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Sep 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to an embodiment, a semiconductor memory device includes a substrate, an insulating film, a plurality of conductive films, an insulating member, a plurality of stacked bodies, and a first member. The insulating member is provided on the insulating film, is positioned between the conductive films in a first direction along the substrate, and extends in a second direction along the substrate, the second direction crossing the first direction. The first member is provided on the insulating member, is positioned between the stacked bodies in the first direction, and extends in a stacking direction of the plurality of electrode films of the stacked bodies. A width in the first direction of the insulating member is larger than a width in the first direction of the first member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.