Semiconductor device
US10290707B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Mar 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
Abstract
A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain region; a base region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity type semiconductor with higher concentration; a trench structure having a first gate insulation film and a first gate electrode arranged at an opening side of the trench and to be deeper than the base region, and a bottom part insulation film; a source electrode electrically connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The drain is arranged to be deeper than the base region. The first gate insulation film is made of higher dielectric insulation material than the bottom part insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.