Transistor structure with field plate for reducing area thereof
US10290714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2016 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
In some embodiments, a BJT structure includes a base region, an emitter region formed in the base region and including an emitter doping region, a collector region including a collector doping region, an insulating structure and a field plate. The base region forms a junction with the collector region between the emitter and collector doping regions. The field plate is formed over an insulating structure over the junction. A first distance between the corresponding emitter and collector doping regions to the junction is shorter than a second distance in another BJT structure without the field plate corresponding to the first distance. The first distance causes a breakdown of the junction corresponding to a first breakdown voltage value between the emitter and collector doping regions being substantially the same or greater than a second breakdown voltage value of the other BJT structure corresponding to the first breakdown voltage value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.