Semiconductor device and method of forming the same
US10290736B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 17, 2018 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jan 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device and a method of forming the same are provided. A substrate is provided. A trench is formed in the substrate and a conductive material is formed filling the trench. A portion of the conductive material filling an upper portion of the trench is removed to expose an upper surface of the substrate and an upper corner and an upper sidewall of the trench. A doping process is performed to form a doped region in the substrate along the exposed upper surface of the substrate and the exposed upper corner and upper sidewall of the trench. The doped region has an upside-down L shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.