Low-temperature atomic layer deposition of boron nitride and BN structures
US10297441B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Aug 10, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Aug 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N2H4, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.