Inventor · Sunnyvale, CA, US

Srinivas D. Nemani

234Patents
39h-index
243Co-inventors
93Inventor score

Filing activity: Nov 13, 1996 → Feb 20, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6413583B1 Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound Electricity 641 Expired
US7541297B2 Method and system for improving dielectric film quality for void free gap fill Electricity 625 Active
US8242031B2 High quality silicon oxide films by remote plasma CVD from disilane precursors Chemistry; Metallurgy 551 Active
US6347636B1 Methods and apparatus for gettering fluorine from chamber material surfaces Emerging Cross-Sectional Technologies 530 Expired
US7749563B2 Two-layer film for next generation damascene barrier application with good oxidation resistance Electricity 448 Expired
US5812403A Methods and apparatus for cleaning surfaces in a substrate processing system Chemistry; Metallurgy 341 Expired
US6465366B1 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers Electricity 282 Expired
US6764958B1 Method of depositing dielectric films Emerging Cross-Sectional Technologies 281 Expired
US6537733B2 Method of depositing low dielectric constant silicon carbide layers Electricity 258 Expired
US7790634B2 Method for depositing and curing low-k films for gapfill and conformal film applications Electricity 215 Active
US6114216A Methods for shallow trench isolation Electricity 193 Expired
US8980758B1 Methods for etching an etching stop layer utilizing a cyclical etching process Electricity 187 Active
US8895449B1 Delicate dry clean Electricity 181 Active
US9269590B2 Spacer formation Electricity 180 Active
US5935340A Method and apparatus for gettering fluorine from chamber material surfaces Chemistry; Metallurgy 171 Expired
US5963840A Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions Electricity 167 Expired
US9287095B2 Semiconductor system assemblies and methods of operation Electricity 152 Active
US9385028B2 Air gap process Electricity 143 Active
US9165783B2 Method of patterning a low-k dielectric film Electricity 117 Active
US8748322B1 Silicon oxide recess etch Electricity 115 Active
US8802572B2 Method of patterning a low-k dielectric film Electricity 115 Active
US9543163B2 Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process Electricity 113 Active
US9865484B1 Selective etch using material modification and RF pulsing Electricity 109 Active
US9478433B1 Cyclic spacer etching process with improved profile control Electricity 106 Active
US9093389B2 Method of patterning a silicon nitride dielectric film Electricity 103 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.