Enhanced thin film deposition
US10297444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Nov 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.