Methods of etching films comprising transition metals
US10297462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Oct 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32135
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.