Copper seed layer and nickel-tin microbump structures
US10297563B2 · kind B2 · utility
3Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2016 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes nickel and tin, wherein the nickel aids in mitigating an absorption of seed layer copper. In another embodiment, the microbump has a mass fraction of tin, or a mass fraction of nickel, that is different in various regions along a height of the microbump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.