Patent · US Active

Metal block and bond pad structure

US10297631B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 19, 2016
Grant dateMay 21, 2019
Priority date
Expiry dateSep 11, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/48451

Abstract

In some embodiments, the present disclosure relates to an integrated chip (IC) structure having a conductive blocking structure configured prevent radiation produced by a device within a first die from affecting an image sensing element within a second die. The IC structure has a first IC die with one or more semiconductor devices and a second IC die with an array of image sensing elements. A hybrid bonding interface region is arranged between the first and second IC die. A conductive bonding structure is arranged within the hybrid bonding interface region and is configured to electrically couple the first IC die to the second IC die. A conductive blocking structure is arranged within the hybrid bonding interface region and extends laterally between the one or more semiconductor devices and the array of image sensing elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.