Dual-curvature cavity for epitaxial semiconductor growth
US10297675B1 · kind B1 · utility
1Cited by
7References
13Claims
0Family size
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Key dates
| Filing date | Oct 27, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Oct 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a field-effect transistor and structures for a field-effect transistor. A gate structure is formed that overlaps with a channel region in a semiconductor fin. The semiconductor fin is etched with a first etching process to form a first cavity extending into the semiconductor fin adjacent to the channel region. The semiconductor fin is etched with a second etching process to form a second cavity that is volumetrically smaller than the first cavity and that adjoins the first cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.