Polycrystalline silicon column and polycrystalline silicon wafer
US10297702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2016 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Nov 26, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A polycrystalline silicon column is provided. The polycrystalline silicon column includes a plurality of silicon grains grown along a crystal-growing direction. In the crystal-growing direction, the average grain size of the silicon grains and the resistivity of the polycrystalline silicon column have opposite variation in their trends, the average grain size of the silicon grains and the oxygen content of the polycrystalline silicon column have opposite variation in their trends, and the average grain size of the silicon grains and the defect area ratio of the polycrystalline silicon column have the same variation in their trends. The overall average defect area ratio of the polycrystalline silicon column is less than or equal to 2.5%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.