Method of processing wafer
US10297710B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 25, 2018 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Apr 25, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2101/40
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of processing a wafer includes applying a laser beam having a wavelength that is transmittable through a sapphire substrate to the wafer while positioning a focused spot of the beam within the wafer in regions corresponding to projected dicing lines through a reverse side of the wafer, thereby forming a plurality of shield tunnels made up of a plurality of pores and an amorphous body surrounding the pores, at predetermined spaced intervals in the wafer along the projected dicing lines. A laser beam having a wavelength that is transmittable through the sapphire substrate to the wafer is applied while positioning a focused spot of the laser beam within the wafer in the projected dicing lines through the reverse side of the wafer, thereby forming modified layers between adjacent shield tunnels. Exerting external forces to the wafer divides the wafer into a plurality of optical device chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.